High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with the silicon-based platforms because of the difficulty of their direct growth on a silicon substrate. Here, we report high-brightness, high-speed, ultra-small-size on-chip electroluminescence (EL) emitters based on semiconducting single-walled carbon nanotubes (SWNTs) thin films. The peaks of the EL emission spectra are 0.2-eV red-shifted from the peaks of the absorption and photoluminescence emission spectra, which suggests emission from trions. High-speed responses of ~ 100 ps were experimentally observed from the trion-based EL emitters, which indicates the possibility of several-GHz modulation. The pulsed light generation was also obtained by applying pulse voltage. These high-speed and ultra-small-size EL emitters can enable novel on-chip optoelectronic devices for highly integrated optoelectronics and silicon photonics.
|Publication status||Published - 2019 Mar 4|
- High-speed light emitters
- Impact excitation
- Semiconducting single-walled carbon nanotube films
- Time-resolved measurement
ASJC Scopus subject areas