Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency

Masaru Kurihara, Toshiaki Makabe

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Two-dimensional simulation of a micro-cell plasma driven by high frequency at 13.56 MHz is described in Xe. The minimum sustaining voltage (K)min in an ideal infinite parallel plates at high frequency is first discussed as a function of both pd and fd (f the applied frequency, d the electrode distance, and p the gas pressure). As decreasing d, (Vs)m\n increases at fixed /, while (K)min decreases with increasing fd at fixed pd in a high frequency discharge under the condition of a spatial ion trapping. A capability for maintaining a micro-cell plasma is investigated under fd < Vde /TT for different two-dimensional geometry of the micro cell (vdf is the effective drift velocity of electrons). The influence of the secondary electron from the electrode becomes important for the maintenance of a microcell plasma and emission efficiency. A powered ring electrode and ground plate system realizes the micro-cell plasma with high density at 13.56 MHz.

Original languageEnglish
Pages (from-to)1372-1378
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume27
Issue number5
DOIs
Publication statusPublished - 1999

Fingerprint

cells
electrodes
sustaining
parallel plates
maintenance
gas pressure
electrons
trapping
rings
electric potential
geometry
ions
simulation

Keywords

  • High frequency plasma
  • Micro-cell plasma
  • Plasma display panel (pdf)
  • Rct model
  • Uv radiation
  • Xe

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

Cite this

Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency. / Kurihara, Masaru; Makabe, Toshiaki.

In: IEEE Transactions on Plasma Science, Vol. 27, No. 5, 1999, p. 1372-1378.

Research output: Contribution to journalArticle

Kurihara, Masaru ; Makabe, Toshiaki. / Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency. In: IEEE Transactions on Plasma Science. 1999 ; Vol. 27, No. 5. pp. 1372-1378.
@article{ee742e74460d410aabf8455758005df0,
title = "Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency",
abstract = "Two-dimensional simulation of a micro-cell plasma driven by high frequency at 13.56 MHz is described in Xe. The minimum sustaining voltage (K)min in an ideal infinite parallel plates at high frequency is first discussed as a function of both pd and fd (f the applied frequency, d the electrode distance, and p the gas pressure). As decreasing d, (Vs)m\n increases at fixed /, while (K)min decreases with increasing fd at fixed pd in a high frequency discharge under the condition of a spatial ion trapping. A capability for maintaining a micro-cell plasma is investigated under fd < Vde /TT for different two-dimensional geometry of the micro cell (vdf is the effective drift velocity of electrons). The influence of the secondary electron from the electrode becomes important for the maintenance of a microcell plasma and emission efficiency. A powered ring electrode and ground plate system realizes the micro-cell plasma with high density at 13.56 MHz.",
keywords = "High frequency plasma, Micro-cell plasma, Plasma display panel (pdf), Rct model, Uv radiation, Xe",
author = "Masaru Kurihara and Toshiaki Makabe",
year = "1999",
doi = "10.1109/27.799815",
language = "English",
volume = "27",
pages = "1372--1378",
journal = "IEEE Transactions on Plasma Science",
issn = "0093-3813",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency

AU - Kurihara, Masaru

AU - Makabe, Toshiaki

PY - 1999

Y1 - 1999

N2 - Two-dimensional simulation of a micro-cell plasma driven by high frequency at 13.56 MHz is described in Xe. The minimum sustaining voltage (K)min in an ideal infinite parallel plates at high frequency is first discussed as a function of both pd and fd (f the applied frequency, d the electrode distance, and p the gas pressure). As decreasing d, (Vs)m\n increases at fixed /, while (K)min decreases with increasing fd at fixed pd in a high frequency discharge under the condition of a spatial ion trapping. A capability for maintaining a micro-cell plasma is investigated under fd < Vde /TT for different two-dimensional geometry of the micro cell (vdf is the effective drift velocity of electrons). The influence of the secondary electron from the electrode becomes important for the maintenance of a microcell plasma and emission efficiency. A powered ring electrode and ground plate system realizes the micro-cell plasma with high density at 13.56 MHz.

AB - Two-dimensional simulation of a micro-cell plasma driven by high frequency at 13.56 MHz is described in Xe. The minimum sustaining voltage (K)min in an ideal infinite parallel plates at high frequency is first discussed as a function of both pd and fd (f the applied frequency, d the electrode distance, and p the gas pressure). As decreasing d, (Vs)m\n increases at fixed /, while (K)min decreases with increasing fd at fixed pd in a high frequency discharge under the condition of a spatial ion trapping. A capability for maintaining a micro-cell plasma is investigated under fd < Vde /TT for different two-dimensional geometry of the micro cell (vdf is the effective drift velocity of electrons). The influence of the secondary electron from the electrode becomes important for the maintenance of a microcell plasma and emission efficiency. A powered ring electrode and ground plate system realizes the micro-cell plasma with high density at 13.56 MHz.

KW - High frequency plasma

KW - Micro-cell plasma

KW - Plasma display panel (pdf)

KW - Rct model

KW - Uv radiation

KW - Xe

UR - http://www.scopus.com/inward/record.url?scp=0033204104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033204104&partnerID=8YFLogxK

U2 - 10.1109/27.799815

DO - 10.1109/27.799815

M3 - Article

VL - 27

SP - 1372

EP - 1378

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

SN - 0093-3813

IS - 5

ER -