Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki, K. Yamaguchi

    Research output: Contribution to journalArticle

    28 Citations (Scopus)

    Abstract

    The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

    Original languageEnglish
    Article number013101
    JournalApplied Physics Letters
    Volume90
    Issue number1
    DOIs
    Publication statusPublished - 2007 Jan 15

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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