Two-photon processes in defect formation by excimer lasers in synthetic silica glass

K. Arai, Hiroaki Imai, H. Hosono, Y. Abe, H. Imagawa

Research output: Contribution to journalArticle

147 Citations (Scopus)

Abstract

Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.

Original languageEnglish
Pages (from-to)1891-1893
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number20
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

silica glass
excimer lasers
defects
photons
lasers
mercury lamps
photon density
excitation
low pressure
energy
glass
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Two-photon processes in defect formation by excimer lasers in synthetic silica glass. / Arai, K.; Imai, Hiroaki; Hosono, H.; Abe, Y.; Imagawa, H.

In: Applied Physics Letters, Vol. 53, No. 20, 1988, p. 1891-1893.

Research output: Contribution to journalArticle

Arai, K. ; Imai, Hiroaki ; Hosono, H. ; Abe, Y. ; Imagawa, H. / Two-photon processes in defect formation by excimer lasers in synthetic silica glass. In: Applied Physics Letters. 1988 ; Vol. 53, No. 20. pp. 1891-1893.
@article{6872edf86f0848c3bd0a9acc5d7f3da4,
title = "Two-photon processes in defect formation by excimer lasers in synthetic silica glass",
abstract = "Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.",
author = "K. Arai and Hiroaki Imai and H. Hosono and Y. Abe and H. Imagawa",
year = "1988",
doi = "10.1063/1.100362",
language = "English",
volume = "53",
pages = "1891--1893",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Two-photon processes in defect formation by excimer lasers in synthetic silica glass

AU - Arai, K.

AU - Imai, Hiroaki

AU - Hosono, H.

AU - Abe, Y.

AU - Imagawa, H.

PY - 1988

Y1 - 1988

N2 - Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.

AB - Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.

UR - http://www.scopus.com/inward/record.url?scp=36549096393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549096393&partnerID=8YFLogxK

U2 - 10.1063/1.100362

DO - 10.1063/1.100362

M3 - Article

AN - SCOPUS:36549096393

VL - 53

SP - 1891

EP - 1893

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -