Ultra high dose boron ion implantation: Super-saturation of boron and its application

Ichiro Mizushima, Atsushi Murakoshi, Kyoichi Suguro, Nobutoshi Aoki, Jun Yamauchi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Super-saturation of dopant atoms in silicon has been attracting interest because a high concentration of carriers in silicon is required in practical applications and is scientifically important. A high hole concentration of about 1 × 1021 cm-3 is obtained by implanting boron into silicon substrate with a dose of 1 × 1017 cm-2. In such super-saturated boron in silicon, it was found that the clustered boron atoms (B12) substitute silicon atoms. The results of a first-principles calculation indicated that the icosahedral boron cluster is energetically preferable to the cubo-octahedral cluster. As a practical application, low resistivity contact between aluminum and silicon of lower than 1 × 10-8 Ω cm2 was demonstrated by this high dose boron implantation technique with co-implantation of germanium.

Original languageEnglish
Pages (from-to)54-59
Number of pages6
JournalMaterials Chemistry and Physics
Volume54
Issue number1-3
Publication statusPublished - 1998 Jul
Externally publishedYes

Fingerprint

Boron
Supersaturation
Silicon
supersaturation
Ion implantation
ion implantation
boron
dosage
silicon
Atoms
implantation
Germanium
atoms
Hole concentration
Aluminum
germanium
Doping (additives)
substitutes
aluminum
electrical resistivity

Keywords

  • Boron
  • Contact
  • First-principles calculation
  • Ion implantation
  • Super-saturation

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Ultra high dose boron ion implantation : Super-saturation of boron and its application. / Mizushima, Ichiro; Murakoshi, Atsushi; Suguro, Kyoichi; Aoki, Nobutoshi; Yamauchi, Jun.

In: Materials Chemistry and Physics, Vol. 54, No. 1-3, 07.1998, p. 54-59.

Research output: Contribution to journalArticle

Mizushima, I, Murakoshi, A, Suguro, K, Aoki, N & Yamauchi, J 1998, 'Ultra high dose boron ion implantation: Super-saturation of boron and its application', Materials Chemistry and Physics, vol. 54, no. 1-3, pp. 54-59.
Mizushima, Ichiro ; Murakoshi, Atsushi ; Suguro, Kyoichi ; Aoki, Nobutoshi ; Yamauchi, Jun. / Ultra high dose boron ion implantation : Super-saturation of boron and its application. In: Materials Chemistry and Physics. 1998 ; Vol. 54, No. 1-3. pp. 54-59.
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