Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

Mitsutaka Konishi; Hisashi Santo; Yuki Hongo; Kazuyuki Tajima; Masaharu Hosoi; Toshiharu Saiki

doi:10.1364/AO.49.003470

Ultrafast amorphization in Ge₁₀Sb₂Te₁₃ thin film induced by single femtosecond laser pulse

Mitsutaka Konishi, Hisashi Santo, Yuki Hongo, Kazuyuki Tajima, Masaharu Hosoi, Toshiharu Saiki

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

We demonstrate amorphization in a Ge₁₀Sb₂Te ₁₃ (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

Original language	English
Pages (from-to)	3470-3473
Number of pages	4
Journal	Applied Optics
Volume	49
Issue number	18
DOIs	https://doi.org/10.1364/AO.49.003470
Publication status	Published - 2010 Jun 20

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

Access to Document

10.1364/AO.49.003470

Cite this

@article{cba394f346e64af799cfc77a20e491bd,

title = "Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse",

abstract = "We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.",

author = "Mitsutaka Konishi and Hisashi Santo and Yuki Hongo and Kazuyuki Tajima and Masaharu Hosoi and Toshiharu Saiki",

year = "2010",

month = jun,

day = "20",

doi = "10.1364/AO.49.003470",

language = "English",

volume = "49",

pages = "3470--3473",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "The Optical Society",

number = "18",

}

TY - JOUR

T1 - Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

AU - Konishi, Mitsutaka

AU - Santo, Hisashi

AU - Hongo, Yuki

AU - Tajima, Kazuyuki

AU - Hosoi, Masaharu

AU - Saiki, Toshiharu

PY - 2010/6/20

Y1 - 2010/6/20

N2 - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

AB - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

UR - http://www.scopus.com/inward/record.url?scp=77955971958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955971958&partnerID=8YFLogxK

U2 - 10.1364/AO.49.003470

DO - 10.1364/AO.49.003470

M3 - Article

C2 - 20563199

AN - SCOPUS:77955971958

VL - 49

SP - 3470

EP - 3473

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 18

ER -

Ultrafast amorphization in Ge₁₀Sb₂Te₁₃ thin film induced by single femtosecond laser pulse

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this