Abstract
We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.
Original language | English |
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Pages (from-to) | 3470-3473 |
Number of pages | 4 |
Journal | Applied Optics |
Volume | 49 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2010 Jun 20 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering