Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

Mitsutaka Konishi, Hisashi Santo, Yuki Hongo, Kazuyuki Tajima, Masaharu Hosoi, Toshiharu Saiki

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

Original languageEnglish
Pages (from-to)3470-3473
Number of pages4
JournalApplied Optics
Volume49
Issue number18
DOIs
Publication statusPublished - 2010 Jun 20

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Amorphization
Ultrashort pulses
reflectance
Thin films
thin films
pulses
excitation
lasers
electron microscopes
recording
melting
pumps
irradiation
annealing
scanning
Melting point
probes
Electron microscopes
electronics
Irradiation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse. / Konishi, Mitsutaka; Santo, Hisashi; Hongo, Yuki; Tajima, Kazuyuki; Hosoi, Masaharu; Saiki, Toshiharu.

In: Applied Optics, Vol. 49, No. 18, 20.06.2010, p. 3470-3473.

Research output: Contribution to journalArticle

Konishi, Mitsutaka ; Santo, Hisashi ; Hongo, Yuki ; Tajima, Kazuyuki ; Hosoi, Masaharu ; Saiki, Toshiharu. / Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse. In: Applied Optics. 2010 ; Vol. 49, No. 18. pp. 3470-3473.
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