Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse

Mitsutaka Konishi; Hisashi Santo; Yuki Hongo; Kazuyuki Tajima; Masaharu Hosoi; Toshiharu Saiki

doi:10.1364/AO.49.003470

Ultrafast amorphization in Ge₁₀Sb₂Te₁₃ thin film induced by single femtosecond laser pulse

Mitsutaka Konishi, Hisashi Santo, Yuki Hongo, Kazuyuki Tajima, Masaharu Hosoi, Toshiharu Saiki

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We demonstrate amorphization in a Ge₁₀Sb₂Te ₁₃ (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

Original language	English
Pages (from-to)	3470-3473
Number of pages	4
Journal	Applied Optics
Volume	49
Issue number	18
DOIs	https://doi.org/10.1364/AO.49.003470
Publication status	Published - 2010 Jun 20

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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abstract = "We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.",

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AU - Konishi, Mitsutaka

AU - Santo, Hisashi

AU - Hongo, Yuki

AU - Tajima, Kazuyuki

AU - Hosoi, Masaharu

AU - Saiki, Toshiharu

PY - 2010/6/20

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N2 - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

AB - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.

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Ultrafast amorphization in Ge₁₀Sb₂Te₁₃ thin film induced by single femtosecond laser pulse

Abstract

ASJC Scopus subject areas

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