Abstract
We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.
| Original language | English |
|---|---|
| Pages (from-to) | 3470-3473 |
| Number of pages | 4 |
| Journal | Applied Optics |
| Volume | 49 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2010 Jun 20 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse. / Konishi, Mitsutaka; Santo, Hisashi; Hongo, Yuki; Tajima, Kazuyuki; Hosoi, Masaharu; Saiki, Toshiharu.
In: Applied Optics, Vol. 49, No. 18, 20.06.2010, p. 3470-3473.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ultrafast amorphization in Ge10Sb2Te13 thin film induced by single femtosecond laser pulse
AU - Konishi, Mitsutaka
AU - Santo, Hisashi
AU - Hongo, Yuki
AU - Tajima, Kazuyuki
AU - Hosoi, Masaharu
AU - Saiki, Toshiharu
PY - 2010/6/20
Y1 - 2010/6/20
N2 - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.
AB - We demonstrate amorphization in a Ge10Sb2Te 13 (GST) thin film through a nonthermal process by femtosecond electronic excitation. Amorphous recording marks were formed by irradiation with a single femtosecond pulse, and were confirmed to be recrystallized by laser thermal annealing. Scanning electron microscope observations revealed that amorphization occurred below the melting temperature. We performed femtosecond pump-probe measurements to investigate the amorphization dynamics of a GST thin film. We found that the reflectivity dropped abruptly within 500 fs after excitation by a single pulse and that a small change in the reflectivity occurred within 5 ps of this drop.
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UR - http://www.scopus.com/inward/citedby.url?scp=77955971958&partnerID=8YFLogxK
U2 - 10.1364/AO.49.003470
DO - 10.1364/AO.49.003470
M3 - Article
VL - 49
SP - 3470
EP - 3473
JO - Applied Optics
JF - Applied Optics
SN - 1559-128X
IS - 18
ER -