Ultrafast optical manipulation of atomic motion in multilayer Ge-Sb-Te phase change materials

K. Makino, J. Tominaga, A. V. Kolobov, P. Fons, M. Hase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Phase change random access memory devices have evolved dramatically with the recent development of superlattice structure of Ge-Sb-Te material (GST-SL) in terms of its low power consumption. The phase change in GST-SL is mainly characterized by the displacement of Ge atoms. Here we examine a new phase change method, that is the manipulation of Ge-Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result we found that the p-polarized pump pulse is more effective in inducing the reversible and irreversible displacement of Ge atoms along [111] direction in the local structure. This structural change would be induced by the anisotropic carrier-phonon interaction along the [111] direction created by the p-polarized pulse.

Original languageEnglish
Title of host publication18th International Conference on Ultrafast Phenomena, UP 2012
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event18th International Conference on Ultrafast Phenomena, UP 2012 - Lausanne, Switzerland
Duration: 2012 Jul 82012 Jul 13

Publication series

NameEPJ Web of Conferences
Volume41
ISSN (Print)2101-6275
ISSN (Electronic)2100-014X

Other

Other18th International Conference on Ultrafast Phenomena, UP 2012
CountrySwitzerland
CityLausanne
Period12/7/812/7/13

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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