Phase change random access memory devices have evolved dramatically with the recent development of superlattice structure of Ge-Sb-Te material (GST-SL) in terms of its low power consumption. The phase change in GST-SL is mainly characterized by the displacement of Ge atoms. Here we examine a new phase change method, that is the manipulation of Ge-Te bonds using linearly-polarized femtosecond near-infrared optical pulses. As a result we found that the p-polarized pump pulse is more effective in inducing the reversible and irreversible displacement of Ge atoms along  direction in the local structure. This structural change would be induced by the anisotropic carrier-phonon interaction along the  direction created by the p-polarized pulse.