Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, Masaya Notomi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
Publication statusPublished - 2010 Dec 1
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: 2010 May 162010 May 21

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period10/5/1610/5/21

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kuramochi, E., Tanabe, T., Taniyama, H., Kawasaki, K., & Notomi, M. (2010). Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Conference on Lasers and Electro-Optics, CLEO 2010 (Optics InfoBase Conference Papers).