Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, Masaya Notomi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Publication statusPublished - 2010 Oct 11
Externally publishedYes
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: 2010 May 162010 May 21

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period10/5/1610/5/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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  • Cite this

    Kuramochi, E., Tanabe, T., Taniyama, H., Kawasaki, K., & Notomi, M. (2010). Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5499945] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).