Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi; Takasumi Tanabe; Hideaki Taniyama; Kohei Kawasaki; Masaya Notomi

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, Masaya Notomi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 10⁸ with a modal volume of less than 1 (λ/n)³. An experimental Q of 360,000 is observed.

Original language	English
Title of host publication	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication	2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Publication status	Published - 2010 Oct 11
Externally published	Yes
Event	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States Duration: 2010 May 16 → 2010 May 21

Publication series

Name	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

Other	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Country/Territory	United States
City	San Jose, CA
Period	10/5/16 → 10/5/21

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Cite this

Kuramochi, E., Tanabe, T., Taniyama, H., Kawasaki, K., & Notomi, M. (2010). Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5499945] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. / Kuramochi, Eiichi; Tanabe, Takasumi; Taniyama, Hideaki et al.

Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499945 (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuramochi, E, Tanabe, T, Taniyama, H, Kawasaki, K & Notomi, M 2010, Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. in Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010., 5499945, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, San Jose, CA, United States, 10/5/16.

Kuramochi E, Tanabe T, Taniyama H, Kawasaki K, Notomi M. Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499945. (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

Kuramochi, Eiichi ; Tanabe, Takasumi ; Taniyama, Hideaki et al. / Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).

@inproceedings{eab595e3b6a44f7b96d62d9befc1ffd8,

title = "Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity",

abstract = "We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.",

author = "Eiichi Kuramochi and Takasumi Tanabe and Hideaki Taniyama and Kohei Kawasaki and Masaya Notomi",

year = "2010",

month = oct,

day = "11",

language = "English",

isbn = "9781557528902",

series = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010",

booktitle = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference",

note = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

TY - GEN

T1 - Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

AU - Kuramochi, Eiichi

AU - Tanabe, Takasumi

AU - Taniyama, Hideaki

AU - Kawasaki, Kohei

AU - Notomi, Masaya

PY - 2010/10/11

Y1 - 2010/10/11

N2 - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

AB - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

UR - http://www.scopus.com/inward/record.url?scp=77957566476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957566476&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77957566476

SN - 9781557528902

T3 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

BT - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference

T2 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this