Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, Masaya Notomi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Publication statusPublished - 2010
Externally publishedYes
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: 2010 May 162010 May 21

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period10/5/1610/5/21

Fingerprint

SOI (semiconductors)
Photonic crystals
insulators
wire
Wire
photonics
Silicon
silicon
crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Kuramochi, E., Tanabe, T., Taniyama, H., Kawasaki, K., & Notomi, M. (2010). Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5499945]

Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. / Kuramochi, Eiichi; Tanabe, Takasumi; Taniyama, Hideaki; Kawasaki, Kohei; Notomi, Masaya.

Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499945.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuramochi, E, Tanabe, T, Taniyama, H, Kawasaki, K & Notomi, M 2010, Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. in Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010., 5499945, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, San Jose, CA, United States, 10/5/16.
Kuramochi E, Tanabe T, Taniyama H, Kawasaki K, Notomi M. Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499945
Kuramochi, Eiichi ; Tanabe, Takasumi ; Taniyama, Hideaki ; Kawasaki, Kohei ; Notomi, Masaya. / Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010.
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