Abstract
Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.
| Original language | English |
|---|---|
| Article number | 07B523 |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2008 Apr 21 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices. / Kaiju, Hideo; Ono, Akito; Kawaguchi, Nobuyoshi; Ishibashi, Akira.
In: Journal of Applied Physics, Vol. 103, No. 7, 07B523, 21.04.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices
AU - Kaiju, Hideo
AU - Ono, Akito
AU - Kawaguchi, Nobuyoshi
AU - Ishibashi, Akira
PY - 2008/4/21
Y1 - 2008/4/21
N2 - Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.
AB - Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.
UR - http://www.scopus.com/inward/record.url?scp=42149146678&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42149146678&partnerID=8YFLogxK
U2 - 10.1063/1.2838620
DO - 10.1063/1.2838620
M3 - Article
AN - SCOPUS:42149146678
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 07B523
ER -