Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices

Hideo Kaiju, Akito Ono, Nobuyoshi Kawaguchi, Akira Ishibashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.

Original languageEnglish
Article number07B523
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21
Externally publishedYes

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polyethylenes
thin films
surface roughness
film thickness
roughness
insulators
scaling
vacuum
scanning
metals
atoms
molecules

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices. / Kaiju, Hideo; Ono, Akito; Kawaguchi, Nobuyoshi; Ishibashi, Akira.

In: Journal of Applied Physics, Vol. 103, No. 7, 07B523, 21.04.2008.

Research output: Contribution to journalArticle

@article{8299ac112b044f5599de29704812837c,
title = "Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices",
abstract = "Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.",
author = "Hideo Kaiju and Akito Ono and Nobuyoshi Kawaguchi and Akira Ishibashi",
year = "2008",
month = "4",
day = "21",
doi = "10.1063/1.2838620",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Ultrasmooth Ni thin films evaporated on polyethylene naphthalate films for spin quantum cross devices

AU - Kaiju, Hideo

AU - Ono, Akito

AU - Kawaguchi, Nobuyoshi

AU - Ishibashi, Akira

PY - 2008/4/21

Y1 - 2008/4/21

N2 - Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.

AB - Surface morphology of Ni thin films vacuum-deposited on polyethylene naphtalate (PEN) organic films has been investigated as a function of Ni film thickness for spin quantum cross devices. The surface roughness of the Ni films decreases from 1.3 nm, being the roughness of PEN films, down to 0.69 nm as the thickness of Ni films increases up to 41 nm. As a result of the scaling investigation of the surface roughness, the surface roughness for Ni films of sub- 10-nm thickness, in the scanning scale of the film thickness, is less than 0.23 nm, corresponding to one atomic layer thickness. These experimental results indicate that Ni thin films on PEN films are suitable as a candidate of metal/insulator hybrid materials used for spin quantum cross devices and may open up a novel research field on the electric characteristics of a few atoms or molecules, which leads to high-density memories.

UR - http://www.scopus.com/inward/record.url?scp=42149146678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149146678&partnerID=8YFLogxK

U2 - 10.1063/1.2838620

DO - 10.1063/1.2838620

M3 - Article

AN - SCOPUS:42149146678

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07B523

ER -