Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Oussama Moutanabbir, Dieter Isheim, David N. Seidman, Yoko Kawamura, Kohei M Itoh

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Using ultraviolet-laser assisted local-electrode atom-probe (UV-LEAP) tomography, we obtain three-dimensional (3D) atom-by-atom images of isotopically modulated S28 i and S 30 i ultrathin layers having thicknesses in the range of 5-30 nm. The 3D images display interfaces between the different monoisotopic layers with an interfacial width of ∼1.7 nm, thus demonstrating a significant improvement over isotope mapping achievable using secondary-ion mass-spectrometry or even visible laser-assisted atom-probe tomography. This sharpness is attributed to reduced thermal effects resulting from using a highly focused UV laser beam. Our findings demonstrate that UV-LEAP tomography provides the high accuracy needed to characterize, at the subnanometer scale, the emerging isotopically programmed nanomaterials.

Original languageEnglish
Article number013111
JournalApplied Physics Letters
Volume98
Issue number1
DOIs
Publication statusPublished - 2011 Jan 3

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ultraviolet lasers
probes
tomography
atoms
electrodes
sharpness
secondary ion mass spectrometry
temperature effects
emerging
isotopes
laser beams
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers. / Moutanabbir, Oussama; Isheim, Dieter; Seidman, David N.; Kawamura, Yoko; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 98, No. 1, 013111, 03.01.2011.

Research output: Contribution to journalArticle

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