Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

Masumi Saitoh, Yukio Nakabayashi, Kensuke Ota, Ken Uchida, Toshinori Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    We systematically studied short-channel mobility (μ) in SOI nanowire transistors (NW Tr.). The strain induced in the NW channel dominates short-L μ. μ of short-L 〈110〉 NW nFETs largely increases due to vertical compressive strain. We achieved further strain enhancement in NW channel by stress memorization technique (SMT). μ increase by SMT is much larger in NW Tr. than in planar Tr. In 〈110〉 NW nFETs, Ion on the same DIBL increases by as much as 58% by SMT thanks to significant RSD reduction in addition to μ increase, while Ion degradation of pFETs is minimal.

    Original languageEnglish
    Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
    Pages34.3.1-34.3.4
    DOIs
    Publication statusPublished - 2010 Dec 1
    Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
    Duration: 2010 Dec 62010 Dec 8

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2010 IEEE International Electron Devices Meeting, IEDM 2010
    CountryUnited States
    CitySan Francisco, CA
    Period10/12/610/12/8

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Saitoh, M., Nakabayashi, Y., Ota, K., Uchida, K., & Numata, T. (2010). Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 34.3.1-34.3.4). [5703475] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703475