Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

Masumi Saitoh, Yukio Nakabayashi, Kensuke Ota, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We systematically studied short-channel mobility (μ) in SOI nanowire transistors (NW Tr.). The strain induced in the NW channel dominates short-L μ. μ of short-L 〈110〉 NW nFETs largely increases due to vertical compressive strain. We achieved further strain enhancement in NW channel by stress memorization technique (SMT). μ increase by SMT is much larger in NW Tr. than in planar Tr. In 〈110〉 NW nFETs, Ion on the same DIBL increases by as much as 58% by SMT thanks to significant RSD reduction in addition to μ increase, while Ion degradation of pFETs is minimal.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

Fingerprint

Nanowires
nanowires
field effect transistors
Transistors
transistors
Ions
SOI (semiconductors)
ions
degradation
Degradation
augmentation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Saitoh, M., Nakabayashi, Y., Ota, K., Uchida, K., & Numata, T. (2010). Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. In Technical Digest - International Electron Devices Meeting, IEDM [5703475] https://doi.org/10.1109/IEDM.2010.5703475

Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. / Saitoh, Masumi; Nakabayashi, Yukio; Ota, Kensuke; Uchida, Ken; Numata, Toshinori.

Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703475.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saitoh, M, Nakabayashi, Y, Ota, K, Uchida, K & Numata, T 2010, Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. in Technical Digest - International Electron Devices Meeting, IEDM., 5703475, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703475
Saitoh M, Nakabayashi Y, Ota K, Uchida K, Numata T. Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. In Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703475 https://doi.org/10.1109/IEDM.2010.5703475
Saitoh, Masumi ; Nakabayashi, Yukio ; Ota, Kensuke ; Uchida, Ken ; Numata, Toshinori. / Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
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