Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

Fingerprint

Ballistics
ballistics
CMOS
saturation
modulation
augmentation
Modulation
Substrates
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2009). Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. In Technical Digest - International Electron Devices Meeting, IEDM [5424318] https://doi.org/10.1109/IEDM.2009.5424318

Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. / Saitoh, Masumi; Yasutake, Nobuaki; Nakabayashi, Yukio; Uchida, Ken; Numata, Toshinori.

Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424318.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saitoh, M, Yasutake, N, Nakabayashi, Y, Uchida, K & Numata, T 2009, Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. in Technical Digest - International Electron Devices Meeting, IEDM., 5424318, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424318
Saitoh M, Yasutake N, Nakabayashi Y, Uchida K, Numata T. Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. In Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424318 https://doi.org/10.1109/IEDM.2009.5424318
Saitoh, Masumi ; Yasutake, Nobuaki ; Nakabayashi, Yukio ; Uchida, Ken ; Numata, Toshinori. / Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. Technical Digest - International Electron Devices Meeting, IEDM. 2009.
@inproceedings{1937fbd4b15b4cc48eb8a886ea19c972,
title = "Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport",
abstract = "We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.",
author = "Masumi Saitoh and Nobuaki Yasutake and Yukio Nakabayashi and Ken Uchida and Toshinori Numata",
year = "2009",
doi = "10.1109/IEDM.2009.5424318",
language = "English",
isbn = "9781424456406",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

AU - Saitoh, Masumi

AU - Yasutake, Nobuaki

AU - Nakabayashi, Yukio

AU - Uchida, Ken

AU - Numata, Toshinori

PY - 2009

Y1 - 2009

N2 - We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

AB - We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

UR - http://www.scopus.com/inward/record.url?scp=77952390900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952390900&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2009.5424318

DO - 10.1109/IEDM.2009.5424318

M3 - Conference contribution

SN - 9781424456406

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -