Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

    Original languageEnglish
    Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
    Pages19.5.1-19.5.4
    DOIs
    Publication statusPublished - 2009 Dec 1
    Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
    Duration: 2009 Dec 72009 Dec 9

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2009 International Electron Devices Meeting, IEDM 2009
    CountryUnited States
    CityBaltimore, MD
    Period09/12/709/12/9

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2009). Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 19.5.1-19.5.4). [5424318] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424318