Uniaxial locked epitaxy of ZnO on the a face of sapphire

P. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki, K. Nakahara, T. Tanabe, H. Takasu

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Abstract

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]∥[112̄0] and (112̄0)∥[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to >0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire.

Original languageEnglish
Pages (from-to)1801-1803
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number12
DOIs
Publication statusPublished - 2000 Sep 18
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fons, P., Iwata, K., Yamada, A., Matsubara, K., Niki, S., Nakahara, K., Tanabe, T., & Takasu, H. (2000). Uniaxial locked epitaxy of ZnO on the a face of sapphire. Applied Physics Letters, 77(12), 1801-1803. https://doi.org/10.1063/1.1311603