Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara; Ken Uchida; Junji Koga; Shin Ichi Takagi

doi:10.1143/JJAP.45.3125

Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin Ichi Takagi

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.

Original language	English
Pages (from-to)	3125-3132
Number of pages	8
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3125
Publication status	Published - 2006 Apr 25

Keywords

SOI MOSFET
SOI thickness fluctuation
Surface roughness scattering

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.3125

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Ishihara, T., Uchida, K., Koga, J., & Takagi, S. I. (2006). Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3125-3132. https://doi.org/10.1143/JJAP.45.3125

Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. / Ishihara, Takamitsu; Uchida, Ken; Koga, Junji; Takagi, Shin Ichi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3125-3132.

Research output: Contribution to journal › Article › peer-review

Ishihara, T, Uchida, K, Koga, J & Takagi, SI 2006, 'Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3125-3132. https://doi.org/10.1143/JJAP.45.3125

Ishihara T, Uchida K, Koga J, Takagi SI. Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Apr 25;45(4 B):3125-3132. https://doi.org/10.1143/JJAP.45.3125

Ishihara, Takamitsu ; Uchida, Ken ; Koga, Junji ; Takagi, Shin Ichi. / Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3125-3132.

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Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

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