Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin Ichi Takagi

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.

    Original languageEnglish
    Pages (from-to)3125-3132
    Number of pages8
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume45
    Issue number4 B
    DOIs
    Publication statusPublished - 2006 Apr 25

    Keywords

    • SOI MOSFET
    • SOI thickness fluctuation
    • Surface roughness scattering

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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