Unified simulation of Schottky and Ohmic contacts

Kazuya Matsuzawa, Ken Uchida, Akira Nishiyama

    Research output: Contribution to journalArticle

    73 Citations (Scopus)

    Abstract

    The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each grid of semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and contact resistances under high impurity concentration conditions are reasonable, compared with measurements. As examples of application to actual devices, the influence of the contact resistance on salicided MOSFET's with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTT's) from the short-channel effect (SCE) are demonstrated.

    Original languageEnglish
    Pages (from-to)103-108
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume47
    Issue number1
    DOIs
    Publication statusPublished - 2000 Jan 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Unified simulation of Schottky and Ohmic contacts'. Together they form a unique fingerprint.

  • Cite this