Universal relationship between low-field mobility and high-field carrier velocity in high-κ and SiO2 gate dielectric MOSFETs

Masumi Saitoh, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The relationships between velocity, ν, and mobility, μ, are investigated to clarify the effectiveness of μ enhancement to increase ν in short channel FETs with SiO2 as well as high-κ gate dielectric. The ν-μ relationships were extracted on the basis of accurate understanding of Vsub dependence of μ; Vsub dependences of μ in high-κ, high Nsub, and short-channel FETs were carefully studied and the deviations from the standard Vsub dependence were found in each case. It was found that ν-μ relationship is universal, namely independent of gate dielectrics, in Si nFETs with L eff of down to 80 nm. Due to lower μ and resultant weaker ν saturation in high-κ FETs, μ booster technologies more significantly contribute to ν and Ion enhancements in short-channel high-κ FETs than in SiO2 FETs.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Saitoh, M., & Uchida, K. (2006). Universal relationship between low-field mobility and high-field carrier velocity in high-κ and SiO2 gate dielectric MOSFETs. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154176] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346757