TY - GEN
T1 - Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures
AU - Tanaka, Takahisa
AU - Hoshi, Yusuke
AU - Sawano, Kentarou
AU - Shiraki, Yasuhiro
AU - Itoh, Kohei M.
PY - 2012/7/30
Y1 - 2012/7/30
N2 - Here we report experimental and theoretical investigations of two-dimensional hole gas (2DHG) mobility in Ge/SiGe heterostructures and deduce the theoretical limit of 2DHG mobility as a function of the strain in Ge. 2DHG mobility was experimentally obtained by mobility spectrum analysis in the temperature range of 5-290 K. Based on the subband structure described with use of a six-band kp method 2DHG mobility was calculated. Each contribution of scattering mechanism was determined from the Dingle ratio obtained from Shubnikov-de Haas oscillations. From the comparison between the experimental and calculated 2DHG mobility, we show that the interface roughness scattering is dominant scattering mechanism below 200K and 2DHG mobility can be increased to more than 5000 cm2/Vs at room temperature if the interface roughness is removed and the 2DHG concentration is controlled appropriately.
AB - Here we report experimental and theoretical investigations of two-dimensional hole gas (2DHG) mobility in Ge/SiGe heterostructures and deduce the theoretical limit of 2DHG mobility as a function of the strain in Ge. 2DHG mobility was experimentally obtained by mobility spectrum analysis in the temperature range of 5-290 K. Based on the subband structure described with use of a six-band kp method 2DHG mobility was calculated. Each contribution of scattering mechanism was determined from the Dingle ratio obtained from Shubnikov-de Haas oscillations. From the comparison between the experimental and calculated 2DHG mobility, we show that the interface roughness scattering is dominant scattering mechanism below 200K and 2DHG mobility can be increased to more than 5000 cm2/Vs at room temperature if the interface roughness is removed and the 2DHG concentration is controlled appropriately.
UR - http://www.scopus.com/inward/record.url?scp=84864235885&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864235885&partnerID=8YFLogxK
U2 - 10.1109/ISTDM.2012.6222447
DO - 10.1109/ISTDM.2012.6222447
M3 - Conference contribution
AN - SCOPUS:84864235885
SN - 9781457718625
T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
SP - 40
EP - 41
BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Y2 - 4 June 2012 through 6 June 2012
ER -