Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures

Takahisa Tanaka, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we report experimental and theoretical investigations of two-dimensional hole gas (2DHG) mobility in Ge/SiGe heterostructures and deduce the theoretical limit of 2DHG mobility as a function of the strain in Ge. 2DHG mobility was experimentally obtained by mobility spectrum analysis in the temperature range of 5-290 K. Based on the subband structure described with use of a six-band kp method 2DHG mobility was calculated. Each contribution of scattering mechanism was determined from the Dingle ratio obtained from Shubnikov-de Haas oscillations. From the comparison between the experimental and calculated 2DHG mobility, we show that the interface roughness scattering is dominant scattering mechanism below 200K and 2DHG mobility can be increased to more than 5000 cm2/Vs at room temperature if the interface roughness is removed and the 2DHG concentration is controlled appropriately.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages40-41
Number of pages2
DOIs
Publication statusPublished - 2012
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

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Heterojunctions
Scattering
Surface roughness
Gases
Spectrum analysis
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, T., Hoshi, Y., Sawano, K., Shiraki, Y., & Itoh, K. M. (2012). Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 40-41). [6222447] https://doi.org/10.1109/ISTDM.2012.6222447

Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures. / Tanaka, Takahisa; Hoshi, Yusuke; Sawano, Kentarou; Shiraki, Yasuhiro; Itoh, Kohei M.

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 40-41 6222447.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, T, Hoshi, Y, Sawano, K, Shiraki, Y & Itoh, KM 2012, Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures. in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222447, pp. 40-41, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222447
Tanaka T, Hoshi Y, Sawano K, Shiraki Y, Itoh KM. Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 40-41. 6222447 https://doi.org/10.1109/ISTDM.2012.6222447
Tanaka, Takahisa ; Hoshi, Yusuke ; Sawano, Kentarou ; Shiraki, Yasuhiro ; Itoh, Kohei M. / Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 40-41
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