Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Toshiyuki Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, Kohei M Itoh

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Abstract

High two-dimensional hole gas (2DHG) mobility (μ 2 DHG > 10000 cm 2 / Vs at T 100 K) strained Ge/Si 1-xGe x structures with x = 0. 5 and 0.65 were fabricated, and temperature dependence of their 2DHG mobility was obtained experimentally by the mobility spectrum analysis of the conductivity under magnetic fields. The theoretically calculated 2DHG mobility was compared to experimental data to determine the effective deformation potentials for scattering by acoustic and optical phonons. Using empirically confirmed parameters, the upper theoretical limit of room temperature 2DHG mobility μ 2 DHG in strained Ge as a function of strain was calculated. The possibility to achieve μ 2 DHG > 5000 cm 2 / Vs at room temperature is presented.

Original languageEnglish
Article number222102
JournalApplied Physics Letters
Volume100
Issue number22
DOIs
Publication statusPublished - 2012 May 28

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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