Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

S. Matsuo, K. Tateno, T. Nakahara, Hiroyuki Tsuda, T. Kurokawa

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.

Original languageEnglish
Pages (from-to)1148-1149
Number of pages2
JournalElectronics Letters
Volume33
Issue number13
Publication statusPublished - 1997 Jun 19
Externally publishedYes

Fingerprint

LSI circuits
Photonic devices
Surface emitting lasers
Polyimides
Silicon
Substrates

Keywords

  • Integrated optoelectronics
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate. / Matsuo, S.; Tateno, K.; Nakahara, T.; Tsuda, Hiroyuki; Kurokawa, T.

In: Electronics Letters, Vol. 33, No. 13, 19.06.1997, p. 1148-1149.

Research output: Contribution to journalArticle

Matsuo, S. ; Tateno, K. ; Nakahara, T. ; Tsuda, Hiroyuki ; Kurokawa, T. / Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate. In: Electronics Letters. 1997 ; Vol. 33, No. 13. pp. 1148-1149.
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