The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.
|Number of pages||2|
|Publication status||Published - 1997 Jun 19|
- Integrated optoelectronics
- Vertical cavity surface emitting lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering