TY - JOUR
T1 - Utilizing of hydrocarbon contamination for prevention of the surface charge-up at electron-beam assisted chemical etching of a diamond chip
AU - Taniguchi, Jim
AU - Miyamoto, Iwao
AU - Ohno, Naoto
AU - Honda, Satoshi
PY - 1997/1
Y1 - 1997/1
N2 - Electron beam assisted chemical etching (EBACE) with oxygen gas is not applicable for direct fine patterning of diamond devices, because the diamond is an electrical insulator and electron beam impingement of the diamond causes the surface charge-up. It is possible to form conductive layer of hydrocarbon on the diamond surface by electron beam irradiation in the atmosphere of diffusion pump oil vapors. In this paper, a scanning electron microscope (SEM) combined with oxygen gas introduction system was used for EBACE of the diamond. It was found by in-situ SEM observation that rectangular patterns with several μm2 area and sub-μm depth were formed on the diamond chip.
AB - Electron beam assisted chemical etching (EBACE) with oxygen gas is not applicable for direct fine patterning of diamond devices, because the diamond is an electrical insulator and electron beam impingement of the diamond causes the surface charge-up. It is possible to form conductive layer of hydrocarbon on the diamond surface by electron beam irradiation in the atmosphere of diffusion pump oil vapors. In this paper, a scanning electron microscope (SEM) combined with oxygen gas introduction system was used for EBACE of the diamond. It was found by in-situ SEM observation that rectangular patterns with several μm2 area and sub-μm depth were formed on the diamond chip.
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U2 - 10.1016/S0168-583X(96)00449-1
DO - 10.1016/S0168-583X(96)00449-1
M3 - Article
AN - SCOPUS:0031546188
SN - 0168-583X
VL - 121
SP - 507
EP - 509
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
ER -