Abstract
We have measured the relative abundance of neutral photofragments in pulsed supersonic free jets of SiH4 excited in the wavelength range 115-170 nm using synchrotron radiation and quadropole mass spectrometry (QMS). Using a sub-ionization QMS threshold electron-impact energy of 11 V and taking the difference between VUV irradiated and non-irradiated SiH4 jet pulses, the relative abundance of the neutral species Si, SiH, SiH2 and SiH3 was determined. The neutral Si signal exhibited a threshold wavelength of ≈ 135 nm, reaching its maximum value at ≈ 115 nm, the short wavelength limit of the current measurements. The SiH signal rose rapidly to a peak at ≈ 158 nm, falling off rapidly to ≈ 145 nm. An additional shoulder on the SiH signal was observed at ≈ 138 nm that gradually diminished for Ω < 125 nm. The SiH2 and SiH3 radicals exhibited a maximum near 145 nm with the SiH2 peak exhibiting a secondary maximum at ≈128 nm.
Original language | English |
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Pages (from-to) | 476-480 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 79-80 |
Issue number | C |
DOIs | |
Publication status | Published - 1994 May 2 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films