Variable threshold-voltage CMOS technology

Tadahiro Kuroda, Tetsuya Fujita, Fumitoshi Hatcri, Takayasu Sakurai

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 μm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.

Original languageEnglish
Pages (from-to)1705-1714
Number of pages10
JournalIEICE Transactions on Electronics
VolumeE83-C
Issue number11
Publication statusPublished - 2000

Fingerprint

Threshold voltage
Networks (circuits)
Substrates
Controllability
Switches
Pumps
Electric potential
Temperature

Keywords

  • Low power CMOS design
  • Low voltage
  • Substrate bias
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kuroda, T., Fujita, T., Hatcri, F., & Sakurai, T. (2000). Variable threshold-voltage CMOS technology. IEICE Transactions on Electronics, E83-C(11), 1705-1714.

Variable threshold-voltage CMOS technology. / Kuroda, Tadahiro; Fujita, Tetsuya; Hatcri, Fumitoshi; Sakurai, Takayasu.

In: IEICE Transactions on Electronics, Vol. E83-C, No. 11, 2000, p. 1705-1714.

Research output: Contribution to journalArticle

Kuroda, T, Fujita, T, Hatcri, F & Sakurai, T 2000, 'Variable threshold-voltage CMOS technology', IEICE Transactions on Electronics, vol. E83-C, no. 11, pp. 1705-1714.
Kuroda T, Fujita T, Hatcri F, Sakurai T. Variable threshold-voltage CMOS technology. IEICE Transactions on Electronics. 2000;E83-C(11):1705-1714.
Kuroda, Tadahiro ; Fujita, Tetsuya ; Hatcri, Fumitoshi ; Sakurai, Takayasu. / Variable threshold-voltage CMOS technology. In: IEICE Transactions on Electronics. 2000 ; Vol. E83-C, No. 11. pp. 1705-1714.
@article{f7b087dce2d24c0abd24c26eca806b32,
title = "Variable threshold-voltage CMOS technology",
abstract = "This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 μm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.",
keywords = "Low power CMOS design, Low voltage, Substrate bias, Threshold voltage",
author = "Tadahiro Kuroda and Tetsuya Fujita and Fumitoshi Hatcri and Takayasu Sakurai",
year = "2000",
language = "English",
volume = "E83-C",
pages = "1705--1714",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",
number = "11",

}

TY - JOUR

T1 - Variable threshold-voltage CMOS technology

AU - Kuroda, Tadahiro

AU - Fujita, Tetsuya

AU - Hatcri, Fumitoshi

AU - Sakurai, Takayasu

PY - 2000

Y1 - 2000

N2 - This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 μm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.

AB - This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 μm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.

KW - Low power CMOS design

KW - Low voltage

KW - Substrate bias

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=0000957831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000957831&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000957831

VL - E83-C

SP - 1705

EP - 1714

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 11

ER -