VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode

Yuji Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1699-1700
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume29
Issue number10
DOIs
Publication statusPublished - 1982
Externally publishedYes

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Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode. / Awano, Yuji; Tomizawa, K.; Hashizume, N.; Kawashima, M.

In: IEEE Transactions on Electron Devices, Vol. 29, No. 10, 1982, p. 1699-1700.

Research output: Contribution to journalArticle

Awano, Yuji ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M. / VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode. In: IEEE Transactions on Electron Devices. 1982 ; Vol. 29, No. 10. pp. 1699-1700.
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