VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode

Y. Awano; K. Tomizawa; N. Hashizume; M. Kawashima

doi:10.1109/T-ED.1982.20994

VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n₊-i(n)-n₊ Diode

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1699-1700
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1982.20994
Publication status	Published - 1982 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1982.20994

Cite this

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author = "Y. Awano and K. Tomizawa and N. Hashizume and M. Kawashima",

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VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode

ASJC Scopus subject areas

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VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n₊-i(n)-n₊ Diode