Vertically integrated computer-aided design for device processing

Toshiaki Makabe, Kazunobu Maeshige

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The status of a series of numerical modelings of plasma etching processes is overviewed. Almost all models of low-temperature plasma, which were proposed in the mid- and late 1980s, are summarized, together with the boundary conditions that plasma processing faces. Physical, chemical and electrical linkage among modules describing low-temperature plasma structure/function in a reactor, the profile and local charging evolution in a hole/trench and electrical device damage during etching will make it possible to prepare a technology computer-aided design (CAD) for the practical purpose of prediction and designing the etching process. This system will also help to determine device arrangement and size in ultra-large-scale integrated (ULSI) circuits in a closed integration system. Our basis for this study is the vertically integrated CAD for device processing (VicAddress), which the authors recently proposed. VicAddress will also provide a tool for discussing the etching processes between process engineers and device designers in the age of nanometer-scale device technology.

Original languageEnglish
Pages (from-to)176-200
Number of pages25
JournalApplied Surface Science
Volume192
Issue number1-4
DOIs
Publication statusPublished - 2002 May 30

Keywords

  • Computer-aided design
  • Device processing
  • High aspect ratio charging
  • Low temperature plasma
  • Oxide etching
  • Plasma structure/function
  • Radio frequency plasma
  • Ultra-large-scale integrated circuits

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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