Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Yoshiaki Sugimoto, Nobuhiro Tsumori, Shintaro Nomura, Toshiharu Saiki

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.

    Original languageEnglish
    Pages (from-to)269-273
    Number of pages5
    JournalOptical Review
    Volume16
    Issue number3
    DOIs
    Publication statusPublished - 2009 May 1

    Keywords

    • Charged exciton
    • Finite-difference time-domain calculation method
    • Interfacial fluctuation quantum dot
    • Multi exciton
    • Near-field scanning microscope
    • Photoluminescence imaging spectroscopy

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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