Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Yoshiaki Sugimoto, Nobuhiro Tsumori, Shintaro Nomura, Toshiharu Saiki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.

Original languageEnglish
Pages (from-to)269-273
Number of pages5
JournalOptical Review
Volume16
Issue number3
DOIs
Publication statusPublished - 2009 May

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space charge
near fields
quantum dots
excitons
photoluminescence
electric fields
spectroscopy
electrons

Keywords

  • Charged exciton
  • Finite-difference time-domain calculation method
  • Interfacial fluctuation quantum dot
  • Multi exciton
  • Near-field scanning microscope
  • Photoluminescence imaging spectroscopy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping. / Sugimoto, Yoshiaki; Tsumori, Nobuhiro; Nomura, Shintaro; Saiki, Toshiharu.

In: Optical Review, Vol. 16, No. 3, 05.2009, p. 269-273.

Research output: Contribution to journalArticle

Sugimoto, Yoshiaki ; Tsumori, Nobuhiro ; Nomura, Shintaro ; Saiki, Toshiharu. / Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping. In: Optical Review. 2009 ; Vol. 16, No. 3. pp. 269-273.
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