Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti: sapphire laser

Ryota Sawada, Hiroki Tanaka, Naoto Sugiyama, Fumihiko Kannari

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

Original languageEnglish
Pages (from-to)1654-1661
Number of pages8
JournalApplied Optics
Volume56
Issue number6
DOIs
Publication statusPublished - 2017 Feb 20

    Fingerprint

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this