Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti: sapphire laser

Ryota Sawada, Hiroki Tanaka, Naoto Sugiyama, Fumihiko Kannari

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

    Original languageEnglish
    Pages (from-to)1654-1661
    Number of pages8
    JournalApplied Optics
    Volume56
    Issue number6
    DOIs
    Publication statusPublished - 2017 Feb 20

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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