Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti

sapphire laser

Ryota Sawada, Hiroki Tanaka, Naoto Sugiyama, Fumihiko Kannari

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

Original languageEnglish
Pages (from-to)1654-1661
Number of pages8
JournalApplied Optics
Volume56
Issue number6
DOIs
Publication statusPublished - 2017 Feb 20

Fingerprint

Gallium nitride
gallium nitrides
Sapphire
Indium
indium
Semiconductor lasers
sapphire
pumping
semiconductor lasers
Wavelength
Lasers
wavelengths
Pumps
lasers
Pumping (laser)
Crystals
pumps
figure of merit
crystals
scaling

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti : sapphire laser. / Sawada, Ryota; Tanaka, Hiroki; Sugiyama, Naoto; Kannari, Fumihiko.

In: Applied Optics, Vol. 56, No. 6, 20.02.2017, p. 1654-1661.

Research output: Contribution to journalArticle

Sawada, Ryota ; Tanaka, Hiroki ; Sugiyama, Naoto ; Kannari, Fumihiko. / Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti : sapphire laser. In: Applied Optics. 2017 ; Vol. 56, No. 6. pp. 1654-1661.
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