Wavelength tunable Q-switch laser in visible region with Pr 3+-doped fluoride-glass fiber pumped by GaN diode lasers

Junichiro Kojou, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Q-switching of wavelength tunable Pr3+-doped fluoride-glass fiber laser pumped by high-power GaN laser diodes is demonstrated. Highest laser peak power of 102 W with 20 ns pulsewidth is obtained for 607 nm at 8.3 kHz.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
Publication statusPublished - 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 2012 May 62012 May 11

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period12/5/612/5/11

Fingerprint

Q switching
Glass lasers
High power lasers
Fiber lasers
Fluorides
Glass fibers
Semiconductor lasers
Switches
Wavelength
Lasers
fiberglass

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kojou, J., & Kannari, F. (2012). Wavelength tunable Q-switch laser in visible region with Pr 3+-doped fluoride-glass fiber pumped by GaN diode lasers. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012 [6326507]

Wavelength tunable Q-switch laser in visible region with Pr 3+-doped fluoride-glass fiber pumped by GaN diode lasers. / Kojou, Junichiro; Kannari, Fumihiko.

2012 Conference on Lasers and Electro-Optics, CLEO 2012. 2012. 6326507.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kojou, J & Kannari, F 2012, Wavelength tunable Q-switch laser in visible region with Pr 3+-doped fluoride-glass fiber pumped by GaN diode lasers. in 2012 Conference on Lasers and Electro-Optics, CLEO 2012., 6326507, 2012 Conference on Lasers and Electro-Optics, CLEO 2012, San Jose, CA, United States, 12/5/6.
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abstract = "Q-switching of wavelength tunable Pr3+-doped fluoride-glass fiber laser pumped by high-power GaN laser diodes is demonstrated. Highest laser peak power of 102 W with 20 ns pulsewidth is obtained for 607 nm at 8.3 kHz.",
author = "Junichiro Kojou and Fumihiko Kannari",
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