TY - JOUR
T1 - What is the origin of activation energy in phase-change film?
AU - Tominaga, Junji
AU - Shima, Takayuku
AU - Fons, Paul
AU - Simpson, Robert
AU - Kuwahara, Masashi
AU - Kolobov, Alexander
PY - 2009/3
Y1 - 2009/3
N2 - Activation energy is one of the basic parameters used to estimate the physical and chemical features of optical and electrical phase-change (PC) films. However, its origin has not been discussed well because of insufficient understanding of the amorphous structures. In this paper, we reveal the origin of the activation energy using a GeSbTe-superlattice model and ab-initio local density approximation (LDA) calculations. The simulated energy required for transition from amorphous to crystal formation in a 9-atomic system was 2.34 eV; This is in good agreement with experimentally reported values.
AB - Activation energy is one of the basic parameters used to estimate the physical and chemical features of optical and electrical phase-change (PC) films. However, its origin has not been discussed well because of insufficient understanding of the amorphous structures. In this paper, we reveal the origin of the activation energy using a GeSbTe-superlattice model and ab-initio local density approximation (LDA) calculations. The simulated energy required for transition from amorphous to crystal formation in a 9-atomic system was 2.34 eV; This is in good agreement with experimentally reported values.
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U2 - 10.1143/JJAP.48.03A053
DO - 10.1143/JJAP.48.03A053
M3 - Article
AN - SCOPUS:77952536861
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 PART 2
M1 - 03A053
ER -