Workshop on atomic and molecular collision data for plasma modelling: Database needs for semiconductor plasma processing

Toshiaki Makabe, Tetsuya Tatsumi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The process time for semiconductor fabrication has a great influence on both the gas phase and the material surface. We have to consider two specific phenomena when we simulate, predict or design a plasma process for materials. One is the temporal change in the plasma structure and function through the change in feed gas molecules, and the other is the temporal change in surface morphology. On the other hand, the plasma surface process is a competition among etching, deposition and charging caused by active ions and neutral radicals incident on the surface. We show and discuss the present stage of the database in the gas phase and on the surface phase of plasma etching employed in semiconductor manufacturing.

Original languageEnglish
Article number024014
JournalPlasma Sources Science and Technology
Volume20
Issue number2
DOIs
Publication statusPublished - 2011 Apr

Fingerprint

semiconductor plasmas
molecular collisions
atomic collisions
vapor phases
plasma etching
charging
manufacturing
etching
fabrication
gases
molecules
ions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Workshop on atomic and molecular collision data for plasma modelling : Database needs for semiconductor plasma processing. / Makabe, Toshiaki; Tatsumi, Tetsuya.

In: Plasma Sources Science and Technology, Vol. 20, No. 2, 024014, 04.2011.

Research output: Contribution to journalArticle

@article{adef1d593cc6409faf29f8a6383fab88,
title = "Workshop on atomic and molecular collision data for plasma modelling: Database needs for semiconductor plasma processing",
abstract = "The process time for semiconductor fabrication has a great influence on both the gas phase and the material surface. We have to consider two specific phenomena when we simulate, predict or design a plasma process for materials. One is the temporal change in the plasma structure and function through the change in feed gas molecules, and the other is the temporal change in surface morphology. On the other hand, the plasma surface process is a competition among etching, deposition and charging caused by active ions and neutral radicals incident on the surface. We show and discuss the present stage of the database in the gas phase and on the surface phase of plasma etching employed in semiconductor manufacturing.",
author = "Toshiaki Makabe and Tetsuya Tatsumi",
year = "2011",
month = "4",
doi = "10.1088/0963-0252/20/2/024014",
language = "English",
volume = "20",
journal = "Plasma Sources Science and Technology",
issn = "0963-0252",
publisher = "IOP Publishing Ltd.",
number = "2",

}

TY - JOUR

T1 - Workshop on atomic and molecular collision data for plasma modelling

T2 - Database needs for semiconductor plasma processing

AU - Makabe, Toshiaki

AU - Tatsumi, Tetsuya

PY - 2011/4

Y1 - 2011/4

N2 - The process time for semiconductor fabrication has a great influence on both the gas phase and the material surface. We have to consider two specific phenomena when we simulate, predict or design a plasma process for materials. One is the temporal change in the plasma structure and function through the change in feed gas molecules, and the other is the temporal change in surface morphology. On the other hand, the plasma surface process is a competition among etching, deposition and charging caused by active ions and neutral radicals incident on the surface. We show and discuss the present stage of the database in the gas phase and on the surface phase of plasma etching employed in semiconductor manufacturing.

AB - The process time for semiconductor fabrication has a great influence on both the gas phase and the material surface. We have to consider two specific phenomena when we simulate, predict or design a plasma process for materials. One is the temporal change in the plasma structure and function through the change in feed gas molecules, and the other is the temporal change in surface morphology. On the other hand, the plasma surface process is a competition among etching, deposition and charging caused by active ions and neutral radicals incident on the surface. We show and discuss the present stage of the database in the gas phase and on the surface phase of plasma etching employed in semiconductor manufacturing.

UR - http://www.scopus.com/inward/record.url?scp=79953688546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953688546&partnerID=8YFLogxK

U2 - 10.1088/0963-0252/20/2/024014

DO - 10.1088/0963-0252/20/2/024014

M3 - Article

AN - SCOPUS:79953688546

VL - 20

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

SN - 0963-0252

IS - 2

M1 - 024014

ER -