X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

M. Ohkubo; P. Fons; A. Kushino; Y. E. Chen; M. Ukibe; Y. Kitajima

doi:10.1016/j.nima.2005.12.120

X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

M. Ohkubo, P. Fons, A. Kushino, Y. E. Chen, M. Ukibe, Y. Kitajima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf-Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing.

Original language	English
Pages (from-to)	731-733
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	559
Issue number	2
DOIs	https://doi.org/10.1016/j.nima.2005.12.120
Publication status	Published - 2006 Apr 14
Externally published	Yes

Keywords

Field effect transistor
High-k oxide
Superconducting tunnel junction
X-ray absorption spectroscopy

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2005.12.120

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Ohkubo, M., Fons, P., Kushino, A., Chen, Y. E., Ukibe, M., & Kitajima, Y. (2006). X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 559(2), 731-733. https://doi.org/10.1016/j.nima.2005.12.120

X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors. / Ohkubo, M.; Fons, P.; Kushino, A. et al.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 559, No. 2, 14.04.2006, p. 731-733.

Research output: Contribution to journal › Article › peer-review

Ohkubo, M, Fons, P, Kushino, A, Chen, YE, Ukibe, M & Kitajima, Y 2006, 'X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 559, no. 2, pp. 731-733. https://doi.org/10.1016/j.nima.2005.12.120

Ohkubo M, Fons P, Kushino A, Chen YE, Ukibe M, Kitajima Y. X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2006 Apr 14;559(2):731-733. doi: 10.1016/j.nima.2005.12.120

Ohkubo, M. ; Fons, P. ; Kushino, A. et al. / X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors. In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2006 ; Vol. 559, No. 2. pp. 731-733.

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AU - Ukibe, M.

AU - Kitajima, Y.

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X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

Abstract

Keywords

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