X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

M. Ohkubo, P. Fons, A. Kushino, Y. E. Chen, M. Ukibe, Y. Kitajima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf-Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing.

Original languageEnglish
Pages (from-to)731-733
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume559
Issue number2
DOIs
Publication statusPublished - 2006 Apr 14
Externally publishedYes

Keywords

  • Field effect transistor
  • High-k oxide
  • Superconducting tunnel junction
  • X-ray absorption spectroscopy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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