ZnO growth on Si by radical source MBE

K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, T. Tanabe, H. Takasu

Research output: Contribution to journalConference article

130 Citations (Scopus)

Abstract

The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(111) has been carried out using NH3 plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emission around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 × 1018 cm-3.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Iwata, K., Fons, P., Niki, S., Yamada, A., Matsubara, K., Nakahara, K., Tanabe, T., & Takasu, H. (2000). ZnO growth on Si by radical source MBE. Journal of Crystal Growth, 214, 50-54. https://doi.org/10.1016/S0022-0248(00)00057-9