ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices

Tatsunori Sakano, Ryo Nishimura, Hiroki Fukuoka, Yoshihiro Yata, Toshiharu Saiki, Minoru Obara, Hiroyuki Kato, Michihiro Sano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7005
DOIs
Publication statusPublished - 2008
EventHigh-Power Laser Ablation VII - Taos, NM, United States
Duration: 2008 Apr 202008 Apr 24

Other

OtherHigh-Power Laser Ablation VII
CountryUnited States
CityTaos, NM
Period08/4/2008/4/24

Fingerprint

Photonic devices
Pulsed laser deposition
Nanorods
nanorods
pulsed laser deposition
photonics
Thin films
thin films
Luminescence
luminescence
Defects
Cathodes
cathodes
defects
Annealing
annealing
Substrates
Growth temperature
Film growth
Buffer layers

Keywords

  • Annealing
  • Buffer layer
  • Gallium nitride
  • Nanorod
  • Pulsed-laser deposition
  • Zinc oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sakano, T., Nishimura, R., Fukuoka, H., Yata, Y., Saiki, T., Obara, M., ... Sano, M. (2008). ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7005). [70051B] https://doi.org/10.1117/12.785224

ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. / Sakano, Tatsunori; Nishimura, Ryo; Fukuoka, Hiroki; Yata, Yoshihiro; Saiki, Toshiharu; Obara, Minoru; Kato, Hiroyuki; Sano, Michihiro.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7005 2008. 70051B.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakano, T, Nishimura, R, Fukuoka, H, Yata, Y, Saiki, T, Obara, M, Kato, H & Sano, M 2008, ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7005, 70051B, High-Power Laser Ablation VII, Taos, NM, United States, 08/4/20. https://doi.org/10.1117/12.785224
Sakano T, Nishimura R, Fukuoka H, Yata Y, Saiki T, Obara M et al. ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7005. 2008. 70051B https://doi.org/10.1117/12.785224
Sakano, Tatsunori ; Nishimura, Ryo ; Fukuoka, Hiroki ; Yata, Yoshihiro ; Saiki, Toshiharu ; Obara, Minoru ; Kato, Hiroyuki ; Sano, Michihiro. / ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7005 2008.
@inproceedings{c726ad48b3e44eb5bea217e9918103ba,
title = "ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices",
abstract = "We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.",
keywords = "Annealing, Buffer layer, Gallium nitride, Nanorod, Pulsed-laser deposition, Zinc oxide",
author = "Tatsunori Sakano and Ryo Nishimura and Hiroki Fukuoka and Yoshihiro Yata and Toshiharu Saiki and Minoru Obara and Hiroyuki Kato and Michihiro Sano",
year = "2008",
doi = "10.1117/12.785224",
language = "English",
isbn = "9780819472069",
volume = "7005",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices

AU - Sakano, Tatsunori

AU - Nishimura, Ryo

AU - Fukuoka, Hiroki

AU - Yata, Yoshihiro

AU - Saiki, Toshiharu

AU - Obara, Minoru

AU - Kato, Hiroyuki

AU - Sano, Michihiro

PY - 2008

Y1 - 2008

N2 - We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.

AB - We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.

KW - Annealing

KW - Buffer layer

KW - Gallium nitride

KW - Nanorod

KW - Pulsed-laser deposition

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=50249125813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249125813&partnerID=8YFLogxK

U2 - 10.1117/12.785224

DO - 10.1117/12.785224

M3 - Conference contribution

SN - 9780819472069

VL - 7005

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -