ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices

Tatsunori Sakano, Ryo Nishimura, Hiroki Fukuoka, Yoshihiro Yata, Toshiharu Saiki, Minoru Obara, Hiroyuki Kato, Michihiro Sano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.

    Original languageEnglish
    Title of host publicationHigh-Power Laser Ablation VII
    DOIs
    Publication statusPublished - 2008 Sep 1
    EventHigh-Power Laser Ablation VII - Taos, NM, United States
    Duration: 2008 Apr 202008 Apr 24

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume7005
    ISSN (Print)0277-786X

    Other

    OtherHigh-Power Laser Ablation VII
    CountryUnited States
    CityTaos, NM
    Period08/4/2008/4/24

    Keywords

    • Annealing
    • Buffer layer
    • Gallium nitride
    • Nanorod
    • Pulsed-laser deposition
    • Zinc oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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  • Cite this

    Sakano, T., Nishimura, R., Fukuoka, H., Yata, Y., Saiki, T., Obara, M., Kato, H., & Sano, M. (2008). ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices. In High-Power Laser Ablation VII [70051B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7005). https://doi.org/10.1117/12.785224