0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

Naoki Harada, Tamio Saito, Hideyuki Oikawa, Yoji Ohashi, Yuji Awano, Masayuki Abe, Kohki Hikosaka

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

    本文言語English
    ページ(範囲)876-879
    ページ数4
    ジャーナルIEICE Transactions on Electronics
    E81-C
    6
    出版ステータスPublished - 1998

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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