160 Gbit/s high-speed ATM switching system

Naoaki Yamanaka, Katsumi Kaizu, Tohru Kishimoto, Kouichi Genda

研究成果: Article査読

抄録

This paper describes a 160-Gbit/s high-speed multi-chip ATM switching system for broadband ISDN. This system uses a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layer ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a MCM using the 15-μ m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is used. The system switches ATM cells at a thoughtput of up to 320 Gbit/s and it is applicable for future B-ISDN.

本文言語English
ページ(範囲)855-862
ページ数8
ジャーナルNTT R and D
45
9
出版ステータスPublished - 1996 12 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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