2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

Hirofumi Higuchi, Ryo Sudo, Satoru Matsumoto

研究成果: Article

抜粋

A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

元の言語English
ページ(範囲)531-533
ページ数3
ジャーナルJapanese journal of applied physics
32
発行部数S3
DOI
出版物ステータスPublished - 1993 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse<sub>2</sub> epilayer grown by low-pressure metalorganic chemical vapor deposition' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用