320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM

Naoaki Yamanaka, Kouichi Genda, Hideki Fukuda, Tohru Kishimoto

研究成果: Article査読

24 被引用数 (Scopus)

抄録

This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.

本文言語English
ページ(範囲)83-91
ページ数9
ジャーナルIEEE Transactions on Components Packaging and Manufacturing Technology Part B
18
1
DOI
出版ステータスPublished - 1995 2

ASJC Scopus subject areas

  • Engineering(all)

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