640-Gb/s high-speed ATM switching system based on 0.25-μm CMOS, MCM-C, and optical WDM interconnection

Naoaki Yamanaka, Ryusuke Kawano, Eiji Oki, Seisho Yasukawa, Katsuhiko Okazaki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband services. A 40-layer, 160 × 114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of an 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm very thin ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high-power dissipation of 230 W. A three-stage ATM switch is made using optical WDM interconnection between the high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80 × 120 × 20 mm and they dissipate 9.65 W and 22.5 W, respectively. They have special chassis for cooling. The chassis contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640.Gb/s throughput and easy, simple interconnection. The system, MCM, and optical WDM interconnection will be applied to future broadband backbone networks.

本文言語English
ページ(範囲)65-72
ページ数8
ジャーナルIEEE Transactions on Advanced Packaging
25
1
DOI
出版ステータスPublished - 2002 2
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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