77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

    研究成果: Conference article査読

    抄録

    We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.

    本文言語English
    ページ(範囲)1513-1518
    ページ数6
    ジャーナルSolid-State Electronics
    43
    8
    DOI
    出版ステータスPublished - 1999 8
    イベントProceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn
    継続期間: 1998 8 301998 9 2

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

    フィンガープリント

    「77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル