80 Gbit/s ATM switching module based on copper-polyimide MCM

K. Genda, Naoaki Yamanaka, Y. Doi, T. Kishimoto, H. Fukuda, S. Sasaki

研究成果: Article査読

抄録

An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.

本文言語English
ページ(範囲)716-717
ページ数2
ジャーナルElectronics Letters
31
9
DOI
出版ステータスPublished - 1995 4 27
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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