A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Naoaki Yamanaka, Tohru Takada

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.

本文言語English
ページ(範囲)310-312
ページ数3
ジャーナルIEEE Photonics Technology Letters
1
10
DOI
出版ステータスPublished - 1989 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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