A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

    研究成果: Article査読

    19 被引用数 (Scopus)

    抄録

    This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

    本文言語English
    論文番号5997296
    ページ(範囲)2552-2559
    ページ数8
    ジャーナルIEEE Journal of Solid-State Circuits
    46
    11
    DOI
    出版ステータスPublished - 2011 11

    ASJC Scopus subject areas

    • 電子工学および電気工学

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