A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR

Yasuhiro Take; Noriyuki Miura; Tadahiro Kuroda

doi:10.1109/ASSCC.2010.5716562

A 30Gb/s/link 2.2Tb/s/mm² inductively-coupled injection-locking CDR

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

This paper presents a 30Gb/s/link 2.2Tb/s/mm² inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm², which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

本文言語	English
ホスト出版物のタイトル	2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
ページ	81-84
ページ数	4
DOI	https://doi.org/10.1109/ASSCC.2010.5716562
出版ステータス	Published - 2010 12月 1
イベント	2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 - Beijing, China 継続期間: 2010 11月 8 → 2010 11月 10

出版物シリーズ

名前	2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

Other

Other	2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
国/地域	China
City	Beijing
Period	10/11/8 → 10/11/10

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/ASSCC.2010.5716562

他のファイルとリンク

引用スタイル

Take, Y, Miura, N & Kuroda, T 2010, A 30Gb/s/link 2.2Tb/s/mm² inductively-coupled injection-locking CDR. in 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010., 5716562, 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010, pp. 81-84, 2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010, Beijing, China, 10/11/8. https://doi.org/10.1109/ASSCC.2010.5716562

@inproceedings{ba3daa7f4f3e4ef4be13510f78f0604a,

title = "A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR",

abstract = "This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].",

author = "Yasuhiro Take and Noriyuki Miura and Tadahiro Kuroda",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ASSCC.2010.5716562",

language = "English",

isbn = "9781424482979",

series = "2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010",

pages = "81--84",

booktitle = "2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010",

note = "2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 ; Conference date: 08-11-2010 Through 10-11-2010",

}

TY - GEN

T1 - A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR

AU - Take, Yasuhiro

AU - Miura, Noriyuki

AU - Kuroda, Tadahiro

PY - 2010/12/1

Y1 - 2010/12/1

N2 - This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

AB - This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

UR - http://www.scopus.com/inward/record.url?scp=79952841629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952841629&partnerID=8YFLogxK

U2 - 10.1109/ASSCC.2010.5716562

DO - 10.1109/ASSCC.2010.5716562

M3 - Conference contribution

AN - SCOPUS:79952841629

SN - 9781424482979

T3 - 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

SP - 81

EP - 84

BT - 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

T2 - 2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

Y2 - 8 November 2010 through 10 November 2010

ER -