A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

    研究成果: Conference contribution

    3 被引用数 (Scopus)

    抄録

    This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

    本文言語English
    ホスト出版物のタイトル2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
    ページ81-84
    ページ数4
    DOI
    出版ステータスPublished - 2010 12月 1
    イベント2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 - Beijing, China
    継続期間: 2010 11月 82010 11月 10

    出版物シリーズ

    名前2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

    Other

    Other2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
    国/地域China
    CityBeijing
    Period10/11/810/11/10

    ASJC Scopus subject areas

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学

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