The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.
|ジャーナル||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|出版ステータス||Published - 2000|
|イベント||2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States|
継続期間: 2000 2月 7 → 2000 2月 9
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