A 6nW inductive-coupling wake-up transceiver for reducing standby power of non-contact memory card by 500×

Noriyuki Miura, Mitsuko Saito, Masao Taguchi, Tadahiro Kuroda

    研究成果: Conference contribution

    抄録

    Memory cards are widely used in electronic systems to expand internal storage area or are used as detachable media to carry data. Although cloud computing has recently drawn attention, data transfer consumes significant power (e.g., 1% battery charge of a smartphone when 10 pictures are transferred through WLAN), making local memory card storage still attractive in mobile devices. As storage capacity increases, the I/O speed should also increase accordingly. However, conventional memory cards require strong ESD protection, limiting high-speed data transfer. A non-contact memory card [1] is one of the solutions to this problem. No signal terminals are exposed for mechanical contact, which relaxes ESD constraints. A data transfer rate of 6Gb/s/ch by inductive coupling [1] and 12Gb/s/ch by transmission-line coupling [2] are reported. The post-UHS-II speed over 5Gb/s can be covered with around 10mW power consumption. Moreover, by supplying power wirelessly, mechanical connections can be completely removed, which could provide features such as waterproof capability or a new attach-remove user interface. A >50% high-efficient wireless power delivery has been reported [3]. However, it mainly supplies a large amount of active power, and the efficiency drops to ∼10% in low-power standby mode. Shutting down the power delivery in standby would require a power-on sequence and an unacceptably long suspend (∼10s) for each new command. For high-speed card access, the power delivery and the wireless data receiver (RX) should always be active, consuming about 2mW in RX and in total 20mW including loss in the wireless power delivery. This standby power is almost identical to that of typical smartphones, tablet-PCs, or camcorders and the battery life halves.

    本文言語English
    ホスト出版物のタイトル2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers
    ページ214-215
    ページ数2
    DOI
    出版ステータスPublished - 2013 4月 29
    イベント2013 60th IEEE International Solid-State Circuits Conference, ISSCC 2013 - San Francisco, CA, United States
    継続期間: 2013 2月 172013 2月 21

    出版物シリーズ

    名前Digest of Technical Papers - IEEE International Solid-State Circuits Conference
    56
    ISSN(印刷版)0193-6530

    Other

    Other2013 60th IEEE International Solid-State Circuits Conference, ISSCC 2013
    国/地域United States
    CitySan Francisco, CA
    Period13/2/1713/2/21

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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