A capacitive accelerometer using SDB-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

研究成果: Article査読

26 被引用数 (Scopus)

抄録

A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.

本文言語English
ページ(範囲)267-272
ページ数6
ジャーナルSensors and Actuators, A: Physical
53
1-3
DOI
出版ステータスPublished - 1996 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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