A capacitive accelerometer using SDB-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

研究成果: Article

26 引用 (Scopus)

抄録

A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.

元の言語English
ページ(範囲)267-272
ページ数6
ジャーナルSensors and Actuators, A: Physical
53
発行部数1-3
出版物ステータスPublished - 1996 5
外部発表Yes

Fingerprint

Silicon
accelerometers
Accelerometers
insulators
Capacitance
capacitance
silicon
rangefinding
Silicon Dioxide
frequency response
Frequency response
converters
chips
Silica
Single crystals
silicon dioxide
output
sensitivity
single crystals
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

これを引用

Matsumoto, Y., Iwakiri, M., Tanaka, H., Ishida, M., & Nakamura, T. (1996). A capacitive accelerometer using SDB-SOI structure. Sensors and Actuators, A: Physical, 53(1-3), 267-272.

A capacitive accelerometer using SDB-SOI structure. / Matsumoto, Yoshinori; Iwakiri, Moritaka; Tanaka, Hidekazu; Ishida, Makoto; Nakamura, Tetsuro.

:: Sensors and Actuators, A: Physical, 巻 53, 番号 1-3, 05.1996, p. 267-272.

研究成果: Article

Matsumoto, Y, Iwakiri, M, Tanaka, H, Ishida, M & Nakamura, T 1996, 'A capacitive accelerometer using SDB-SOI structure', Sensors and Actuators, A: Physical, 巻. 53, 番号 1-3, pp. 267-272.
Matsumoto Y, Iwakiri M, Tanaka H, Ishida M, Nakamura T. A capacitive accelerometer using SDB-SOI structure. Sensors and Actuators, A: Physical. 1996 5;53(1-3):267-272.
Matsumoto, Yoshinori ; Iwakiri, Moritaka ; Tanaka, Hidekazu ; Ishida, Makoto ; Nakamura, Tetsuro. / A capacitive accelerometer using SDB-SOI structure. :: Sensors and Actuators, A: Physical. 1996 ; 巻 53, 番号 1-3. pp. 267-272.
@article{a61681e8cde64a3db935c9e6b7be681f,
title = "A capacitive accelerometer using SDB-SOI structure",
abstract = "A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.",
keywords = "Capacitance-voltage converters, Capacitive accelerometers, Damping control, Silicon direct bonding, Silicon on insulator",
author = "Yoshinori Matsumoto and Moritaka Iwakiri and Hidekazu Tanaka and Makoto Ishida and Tetsuro Nakamura",
year = "1996",
month = "5",
language = "English",
volume = "53",
pages = "267--272",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - A capacitive accelerometer using SDB-SOI structure

AU - Matsumoto, Yoshinori

AU - Iwakiri, Moritaka

AU - Tanaka, Hidekazu

AU - Ishida, Makoto

AU - Nakamura, Tetsuro

PY - 1996/5

Y1 - 1996/5

N2 - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.

AB - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.

KW - Capacitance-voltage converters

KW - Capacitive accelerometers

KW - Damping control

KW - Silicon direct bonding

KW - Silicon on insulator

UR - http://www.scopus.com/inward/record.url?scp=0011075708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0011075708&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0011075708

VL - 53

SP - 267

EP - 272

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 1-3

ER -