A comparative study of the effects of sputtering deposition conditions for ZnO surface electrode layers on Cu(In,Ga)Se2 and CuGaSe2 solar cells

Shogo Ishizuka, Paul J. Fons, Hajime Shibata

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The effects of post p-n junction formation processes, namely transparent conducting oxide (TCO) layer deposition conditions on Cu(In,Ga)Se2 (CIGS) and CuGaSe2 (CGS) solar cell device properties were comparatively studied. It was found that CIGS devices were relatively insensitive to the presence of oxygen and heat during TCO layer deposition, whereas CGS devices were extremely sensitive to oxygen and heat, resulting in a degradation of device performance in the presence of them. The use of the relatively low TCO deposition temperature (Ts) of 80 °C led to significant improvements in the fill factor values of CGS devices compared to the case for Ts ~ 180 °C, though the open circuit voltage was reduced. These results suggest that TCO deposition conditions can be an important parameter which critically affects ternary CGS solar cell device properties. It is, therefore, suggested that TCO layer deposition conditions for CGS devices should be optimized independently of that for conventional narrow-gap CIGS devices.

本文言語English
ページ(範囲)49-54
ページ数6
ジャーナルThin Solid Films
633
DOI
出版ステータスPublished - 2017 7月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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