A first-principles core-level XPS study on the boron impurities in germanium crystal

Jun Yamauchi, Yoshihide Yoshimoto, Yuji Suwa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
出版社American Institute of Physics Inc.
ページ41-42
ページ数2
ISBN(印刷版)9780735411944
DOI
出版ステータスPublished - 2013
イベント31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
継続期間: 2012 7 292012 8 3

出版物シリーズ

名前AIP Conference Proceedings
1566
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
国/地域Switzerland
CityZurich
Period12/7/2912/8/3

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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