A high-speed inductive-coupling link is presented. It communicates at a data rate of 11 Gb/s for a communication distance of 15 μm in 180 nm CMOS. The data rate is 11× higher than previous inductive-coupling links. The communication distance is 5× longer than a capacitive-coupling link for the same data rate, bit error rate, and layout area. Burst transmission utilizing the high-speed inductive-coupling link is also presented. Multi-bit data links are multiplexed into a single burst data link. It reduces layout area by a factor of three in 180 nm CMOS and a factor of nine in 90 nm CMOS.
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