@article{86d15babf20f4f5483b54cc630fd3f84,
title = "A high-speed inductive-coupling link with burst transmission",
abstract = "A high-speed inductive-coupling link is presented. It communicates at a data rate of 11 Gb/s for a communication distance of 15 μm in 180 nm CMOS. The data rate is 11× higher than previous inductive-coupling links. The communication distance is 5× longer than a capacitive-coupling link for the same data rate, bit error rate, and layout area. Burst transmission utilizing the high-speed inductive-coupling link is also presented. Multi-bit data links are multiplexed into a single burst data link. It reduces layout area by a factor of three in 180 nm CMOS and a factor of nine in 90 nm CMOS.",
keywords = "Burst transmission, Data link, High speed, Inductive coupling, Three dimensional",
author = "Noriyuki Miura and Yoshinori Kohama and Yasfumi Sugimori and Hiroki Ishikuro and Takayasu Sakurai and Tadahiro Kuroda",
note = "Funding Information: Manuscript received June 09, 2008; revised November 14, 2008. Current version published February 25, 2009. This work was supported by CREST/JST. The 180 nm CMOS VLSI chip in this work was fabricated by Taiwan Semiconductor Manufacturing Corporation (TSMC). The 90 nm CMOS VLSI chip in this work was fabricated through the chip fabrication program of VDEC, the University of Tokyo, with the collaboration by STARC, Fujitsu Limited, Mat-sushita Electric Industrial Company Limited., NEC Electronics Corporation, Renesas Technology Corporation, and Toshiba Corporation. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",
year = "2009",
month = mar,
doi = "10.1109/JSSC.2008.2012365",
language = "English",
volume = "44",
pages = "947--955",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}