抄録
A high-speed inductive-coupling link is presented. It communicates at a data rate of 11 Gb/s for a communication distance of 15 μm in 180 nm CMOS. The data rate is 11× higher than previous inductive-coupling links. The communication distance is 5× longer than a capacitive-coupling link for the same data rate, bit error rate, and layout area. Burst transmission utilizing the high-speed inductive-coupling link is also presented. Multi-bit data links are multiplexed into a single burst data link. It reduces layout area by a factor of three in 180 nm CMOS and a factor of nine in 90 nm CMOS.
| 本文言語 | English |
|---|---|
| 論文番号 | 4787576 |
| ページ（範囲） | 947-955 |
| ページ数 | 9 |
| ジャーナル | IEEE Journal of Solid-State Circuits |
| 巻 | 44 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2009 3 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering