A Magnetic Sensor with Silicon on Insulator Structure for High Temperature Applications

Yoshinori Matsumoto, Hirokazu Kawai, Tadashi Terada, Shoji Kawahito, Makoto Ishida, Teturo Nakamura

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Silicon magnetic Hall sensor for high temperature applications has been developed with Silicon-On-Insulator(SOI) structure. The Hall cell of magnetic sensor is dielectrically isolated by silicon dioxide from silicon substrate in order to reduce leakage current between the Hall cell and silicon substrate at high temperature. The theoretical sensitivity of the magnetic sensor was calculated and compared to the experimental result. There is a tradeoff between sensitivity and available temperature range. The magnetic sensor has temperature offset drifts which are caused by size mismatching, unbalance of doping condition and thermal stress between sensor and package. These offsets are compensated by design optimization and signal conditioning circuit. As a result, silicon magnetic Hall sensor with SOI structure could be operated steadily over high temperature of 200∘.

本文言語English
ページ(範囲)317-324
ページ数8
ジャーナルieej transactions on sensors and micromachines
116
8
DOI
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 機械工学
  • 電子工学および電気工学

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